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NUS1204MN Overvoltage Protection IC with Integrated MOSFET
This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit (OVP) with a -12 V P-Channel power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before any damage can occur. The OVP IC is optimized for applications using an external AC-DC adapter or a car accessory charger to power a portable product or recharge its internal batteries. It has a nominal overvoltage threshold of 4.725 V which makes it ideal for single cell Li-Ion as well as 3/4 cell NiCD/NiMH applications.
Features http://onsemi.com MARKING DIAGRAM
WDFN6 CASE 506AN 1 1 2 U2 M G 3 6 5 4
U2 = Specific Device Code M = Date Code G = Pb-Free Package
* * * * * * * *
OvervoltageTurn-Off Time of Less Than 20 ms Accurate Voltage Threshold of 4.725 V, Nominal High Accuracy Undervoltage Threshold of 2.0% -12 V Integrated P-Channel Power MOSFET Low RDS(on) = 75 mW @ -4.725 V Low Profile 2.0 x 2.0 mm WDFN Package Suitable for Portable Applications Maximum Solder Reflow Temperature @ 260C This device is manufactured with a Pb-Free external lead finish only.
PIN CONNECTIONS
GATE OUT GND
1 2 3
8
6 5
DRAIN SOURCE IN
7
4
(Top View)
Benefits
* Provide Battery Protection * Integrated Solution Offers Cost and Space Savings * Integrated Solution Improves System Reliability
Applications
ORDERING INFORMATION
Device NUS1204MNT1G Package WDFN6 (Pb-Free) Shipping 3000 Tape & Reel
* Portable Computers and PDAs * Cell Phones and Handheld Products * Digital Cameras
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
June, 2006 - Rev. 1
Publication Order Number: NUS1204MN/D
NUS1204MN
SOURCE DRAIN Schottky Diode
AC/DC Adapter of Accessory Charger
P-CH IN GATE + + - Vref OUT C1 LOAD
GND
Figure 1. Simplified Schematic PIN FUNCTION DESCRIPTIONS
Pin # 1 2 Symbol GATE OUT Gate pin of the P-Channel Power MOSFET This signal drives the gate of a P-channel Power MOSFET. It is controlled by the voltage level on the IN pin. When an overvoltage event is detected, the OUT pin is driven to within 1.0 V of VIN in less than 20 msec provided that gate and stray capacitance is less than 12 nF. Circuit Ground This pin senses an external voltage point. If the voltage on this input rises above the overvoltage threshold (VTH), the OUT pin will be driven to within 1.0 V of VIN, thus disconnecting the P-Channel Power MOSFET. The nominal threshold level is 4.725 V and this threshold level can be increased with the addition of an external resistor between the IN pin and the adapter. Source pin of the P-Channel Power MOSFET Drain pin of the P-Channel Power MOSFET Pin Description
3, 7 4
GND IN
5 6, 8
SOURCE DRAIN
OVERVOLTAGE PROTECTION CIRCUIT TRUTH TABLE
IN Vth OUT GND VIN
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NUS1204MN
MAXIMUM RATINGS (TA = 25C unless otherwise stated)
Rating OUT Voltage to GND Input Pin Voltage to GND Maximum Power Dissipation (Note 1) Thermal Resistance Junction-to-Air (Note 1) Junction Temperature Operating Ambient Temperature Storage Temperature Range ESD Performance (HBM) (Note 2) Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, Steady State, TA = 25C (Note 1) OVP IC P-Channel FET Pin 2 4 - - - - - 2,3,4 Symbol VO Vinput PD RJA TJ TA Tstg - VDSS VGS ID -8 Min -0.3 -0.3 - - - -40 -65 2.5 Max 12 12 0.96 130 130 150 85 150 - -12 8 -0.6 Unit V V W C/W C C C kV V V A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Human body model (HBM): MIL STD 883C Method 3015-7, (R = 1500 W, C = 100 pF, F = 3 pulses delay 1 s).
ELECTRICAL CHARACTERISTICS (TA= 25C, Vcc = 6.0 V, unless otherwise specified)
Characteristic Input Threshold (Pin 4, Vin Increasing) Input Threshold Hysteresis (Pin 4, Vin Decreasing) Supply Current (Pin 4) (Vin = 4.34 V) (Vin = 6.5 V) Minimum Operating Voltage (Pin 4) (Note 3) (TA = 25C) (TA = -40C to 85C) Output Voltage High (Vin = 8.0 V; ISource = 1.0 mA) Output Voltage High (Vin = 8.0 V; ISource = 0.25 mA) Output Voltage High (Vin = 8.0 V; ISource = 0 mA) Output Voltage Low (Input < 4.5 V; ISink = 0 mA; CNTRL = 0 V) Propagation Delay Input to Output Complementary Output NCP304 Series Output Transition, High to Low Output Transition, Low to High 3. Guaranteed by design. tpHL tpLH - - 10 21 - 60 Symbol VTH VHYS Iin - - Vin(min) - - Voh Vin-1.0 Vin-0.25 Vin-0.1 - 0.55 0.65 - 0.70 0.80 - V - - 3.0 3.9 V Min 4.630 0.135 Typ 4.725 0.225 Max 4.820 0.315 Unit V V mA
Vol
-
0.1
V ms
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NUS1204MN
P-CHANNEL MOSFET (TA= 25C, unless otherwise specified)
Parameter Drain to Source On Resistance VGS = -4.5 V, ID = 600 mA VGS = -4.5 V, ID = 1.0 A Zero Gate Voltage Drain Current VGS = -4.5 V, VGS = 0 V, VDS = -10 V Turn On Delay (Note 4) VGS = -4.5 V Turn Off Delay (Note 4) VGS = -4.5 V Input Capacitance VGS = 0 V, f = 1.0 MHz, VDS = -10 V Gate to Source Leakage Current VGS = 8.0 V, VDS = 0 V Drain to Source Breakdown Voltage VGS = 0 V, ID = -250 mA Gate Threshold Voltage VGS = VDS, ID = -250 mA Symbol RDS(on) 75 75 IDSS -1.0 ton 5.5 toff 20 Cin 531 IGSS 10 V(BR)DSS -12 V(GS)th -0.4 -0.7 -1.0 V V nA pF ns ns 100 100 mA Min Typ Max Units mW
4. Switching characteristics are independent of operating junction temperature.
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NUS1204MN
PACKAGE DIMENSIONS
WDFN6, 2x2 CASE 506AN-01 ISSUE B
D A B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L J MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.25 REF 0.20 0.30 0.15 REF
PIN ONE REFERENCE
E
2X
0.10 C
2X
0.10 C
0.10 C
6X
0.08 C
D2
6X
L
1 3
6X
K
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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III III
A3 A1 D2 e
2X E2 6 4
A
C
SEATING PLANE 6X
SOLDERMASK DEFINED MOUNTING FOOTPRINT
2.30
6X
0.35
0.43
4X
1 0.65 PITCH
b
6X
0.25 B
2X
6X
J
0.10 C A 0.05 C
BOTTOM VIEW
NOTE 3
0.72
1.05
DIMENSIONS: MILLIMETERS
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NUS1204MN/D

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